Silicon Front-End Junction Formation--Physics and Technology Vol. 810 : 2004 MRS Spring Meeting Symposium Proceedings

Materials scientists, silicon technologists and TCAD researchers come together in this volume to highlight trends in research on the formation of ultrashallow junctions and their integration into devices. It is generally agreed that conventional RTP processes will not be able to reach the 45nm node of the ITRS. As alternatives, concepts based on solid-phase epitaxy or millisecond-flash annealing, and the use of impurities like fluorine or carbon, are discussed. An important issue for future devices is silicides and germanides. With a trend towards lower process temperatures, scientific and technological interest is directed especially towards nickel silicides. Of similar importance for future technologies is the use of silicon-germanium layers in which dopant redistribution is considerably affected by strain effects. And since process development and optimization are now hardly conceivable without technology computer-aided design, the potentials and limitations of process simulation are addressed. Additional presentations focus on applications from atomistic modeling to the prediction of ultrashallow junction formation. Applications of state-of-the-art characterization methods, in particular two-dimensional carrier profiling on the nanometer scale, are also demonstrated.Pichler, Peter is the author of 'Silicon Front-End Junction Formation--Physics and Technology Vol. 810 : 2004 MRS Spring Meeting Symposium Proceedings', published 2009 under ISBN 9781558997608 and ISBN 1558997601.