Modern Semiconductor Quantum Physics

Modern Semiconductor Quantum Physics has the following constituents: (1) energy band theory: pseudopotential method (empirical and ab initio); density functional theory; quasiparticles; LCAO method; k.p method; spin-orbit splitting; effective mass and Luttinger parameters; strain effects and deformation potentials; temperature effects. (2) Optical properties; absorption and exciton effect; modulation spectroscopy; photo luminescence and photo luminescence excitation; Raman scattering and polaritons; photoionization. (3) Defects and Impurities: effective mass theory and shallow impurity states; deep state cluster method, super cell method, Green's function method; carrier recombination kinetics; trapping transient measurements; electron spin resonance electron lattice interaction and lattice relaxation effects; multi-phonon nonradiative recombination negative U center, DX center and EL2 defects. (4) Semiconductor surfaces: two dimensional periodicity and surface reconstruction; surface electronic states; photo-electron spectroscopy; LEED, STM and other experimental methods. (5) Low-dimensional structures: Heterojunctions; quantum wells; superlattices; quantum-confined Stark effect and Wannier-Stark ladder effects; resonant tunneling; quantum Hall effect; quantum wires and quantum dots.Li, Ming-Fu is the author of 'Modern Semiconductor Quantum Physics' with ISBN 9789810215996 and ISBN 9810215991.