Introduction to Spinors and Geometry With Applications in Physics

The MOCVD Challenge describes how to use MOCVD to grow materials & devices, in particular indium phosphide, gallium indium arsenide & gallium indium arseno phosphide. It contains detailed descriptions of reactors, starting materials & growth conditions. It discusses lattice-matched materials, strained layers & growth on non-matched substrates such as silicon. It includes results which include the growth, characterization, application of heterojunctions, quantum wells & superlattices based on these compounds. It concludes with applications for indium phosphide related semiconductors such as lasers & photodetectors & for electronic components such as optical fibres & satellite communication systems. Together with The MOCVD Challenge: Volume 2 it forms a valuable reference for users of MOCVD, & those evaluating MOCVD for use in their research. Written for physicists, materials scientists, electronics & electrical engineers involved in semiconducting materials & as-grown device research.Benn, I. M. is the author of 'Introduction to Spinors and Geometry With Applications in Physics' with ISBN 9780852741696 and ISBN 0852741693.