CMOS Front-End Materials and Process Technology: Volume 765

The integrated-circuit industry has relied on shrinking transistor geometries for improvements in circuit performance and cost-perfunction for more than three decades. Continued transistor scaling will not be as straightforward in the future as it has been in the past, however, because fundamental materials and process limits are rapidly being approached. Future complementary metal-oxide semiconductor (MOS) transistors will require high-permittivity (high-k) gate dielectrics and metal gate electrodes, as well as low-resistance ultrashallow junctions, in order to meet the stringent specifications of the International Technology Roadmap for Semiconductors. Techniques such as bandgap and strain engineering to improve transconductance and drive current may be required as well. Process integration issues must be solved, and reliability must be assured, before any new material or processing technique can be used in IC manufacture. A further complication is that the key challenges will differ according to application, e.g., high-performance logic, low-operating power logic, and mixed-signal, high-density memory. This volume reports the state-of-the-art research results from industry, government labs and academia covering a wide scope of front-end process issues for future CMOS technologies. Topics include: advanced materials and structures; high-k dielectrics; advanced gate stack materials; heterogeneous integration and strained Si technologies; ultrashallow junction technology; strained Si and source/drain technology; and laser annealing and silicide processes.King, T. J. is the author of 'CMOS Front-End Materials and Process Technology: Volume 765' with ISBN 9781558997028 and ISBN 1558997024.